IRG7PH35UD1-EP Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD1-EP Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight

IRG7PH35UD1-EP Datasheet (430.92 KB)

IRG7PH35UD1-EP Datasheet Preview — Preview of IRG7PH35UD1-EP PDF

Datasheet Details

Part number:

IRG7PH35UD1-EP

Manufacturer:

International Rectifier

File Size:

430.92 KB

Description:

Insulated gate bipolar transistor.
PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD.

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IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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