IRG7PH35UDPbF, IRG7PH35UD-EP Datasheet - International Rectifier

IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UDPbF Features

* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-

IRG7PH35UD-EP_InternationalRectifier.pdf

IRG7PH35UDPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH35UDPbF, IRG7PH35UD-EP. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRG7PH35UDPbF, IRG7PH35UD-EP

Manufacturer:

International Rectifier

File Size:

492.67 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH35UDPbF, IRG7PH35UD-EP.
Please refer to the document for exact specifications by model.

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IRG7PH35UDPbF IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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