Datasheet4U Logo Datasheet4U.com

IRG7PH35U-EP Datasheet - International Rectifier

IRG7PH35U-EP, INSULATED GATE BIPOLAR TRANSISTOR

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR .
datasheet Preview Page 1 from Datasheet4u.com

IRG7PH35U-EP-InternationalRectifier.pdf

Preview of IRG7PH35U-EP PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number:

IRG7PH35U-EP

Manufacturer:

International Rectifier

File Size:

397.80 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation C GC E Applications
* U. P. S We

IRG7PH35U-EP Distributors

📁 Related Datasheet

IRG4BC20F IRG4BC20FD IRG4BC20FD-S IRG4BC20K IRG4BC20K-S IRG4BC20KD

📌 All Tags

IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PH35U-EP-like datasheet
IRG7PH35UD-EP
IRG7PH35UD1-EP
IRG7PH35UD1MPBF
IRG7PH35UD1PbF
IRG7PH35UDPbF