Part number:
IRG7PH35U-EP
Manufacturer:
International Rectifier
File Size:
397.80 KB
Description:
Insulated gate bipolar transistor.
* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre
IRG7PH35U-EP Datasheet (397.80 KB)
IRG7PH35U-EP
International Rectifier
397.80 KB
Insulated gate bipolar transistor.
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