Datasheet Details
- Part number
- IRG7PH35U-EP
- Manufacturer
- International Rectifier
- File Size
- 397.80 KB
- Datasheet
- IRG7PH35U-EP-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP Description
PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR .
IRG7PH35U-EP Features
* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre
IRG7PH35U-EP Applications
* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation
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Applications
* U. P. S We
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