IRG7PH35U-EP Datasheet - International Rectifier

IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35U-EP Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

IRG7PH35U-EP Datasheet (397.80 KB)

IRG7PH35U-EP Datasheet Preview — Preview of IRG7PH35U-EP PDF

Datasheet Details

Part number:

IRG7PH35U-EP

Manufacturer:

International Rectifier

File Size:

397.80 KB

Description:

Insulated gate bipolar transistor.

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IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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