IRG7PH35UD1PbF, IRG7PH35UD1-EP Datasheet - International Rectifier

IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD1PbF Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight

IRG7PH35UD1-EP_InternationalRectifier.pdf

IRG7PH35UD1PbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRG7PH35UD1PbF, IRG7PH35UD1-EP

Manufacturer:

International Rectifier

File Size:

430.92 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP.
Please refer to the document for exact specifications by model.

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IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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