IRG7PH35UD1PbF Datasheet, Bipolar Transistor, International Rectifier

Insulated gate bipolar transistor

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	In Stock	Quantity	Price	Buy Now
	Infineon Technologies AG	IRG7PH35UD1PbF	IRG7PH35UD1PBF	IGBT TRENCH 1200V 50A TO-247AC	DigiKey	0	0	$0	🛒 Buy Now

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IRG7PH35UD1PbF

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International Rectifier

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Description:

Insulated gate bipolar transistor.
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✔ IRG7PH35UD1PbF Features

Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested

✔ IRG7PH35UD1PbF Application

IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features
Low VCE (ON) trench

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IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

IRG7PH35UD1PbF Distributor

International Rectifier

IRG7PH35UD1PBF

IGBT WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPL Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

ComSIT USA

400 In Stock

Unit Price : $0