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IRG7PH35UD1PbF, IRG7PH35UD1-EP Datasheet - International Rectifier

IRG7PH35UD1-EP_InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRG7PH35UD1PbF, IRG7PH35UD1-EP

Manufacturer:

International Rectifier

File Size:

430.92 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP.
Please refer to the document for exact specifications by model.

IRG7PH35UD1PbF, IRG7PH35UD1-EP, INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD1PbF Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight

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