IRG4BC20K-S

INSULATED GATE BIPOLAR TRANSISTOR

IRF

* High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V

* Combines low conduction losses with high switching speed

* Latest generation design provides tighter parameter distribution and higher efficiency than previous gener

IRG4BC20K-S

IRF

162.34 KB

Insulated gate bipolar transistor.

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IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

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