IRG4BC20F
IRF
161.56kb
Insulated gate bipolar transistor.
TAGS
📁 Related Datasheet
IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: optimized for medium operating frequencies.
IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD -91783A
IRG4BC20FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequenc.
IRG4BC20FD-SPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD -95965
IRG4BC20FD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for me.
IRG4BC20FDPBF - INSULATED GATEBIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 94906
IRG4BC20FDPbF
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast: optimized for med.
IRG4BC20FPBF - Fast Speed IGBT
(International Rectifier)
PD - 95742
IRG4BC20FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >2.
IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD - 91600A
IRG4BC20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start.
IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD - 91620A
IRG4BC20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (sta.
IRG4BC20K-SPBF - Short Circuit Rated UltraFast IGBT
(International Rectifier)
95167
IRG4BC20K-SPbF
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines.
IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for hi.
IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR
(IRF)
PD -91598A
IRG4BC20KD-S
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Short Circuit Rated UltraFast IGBT
VCES = 6.