IRG4BC20F Datasheet PDF (INSULATED GATE BIPOLAR TRANSISTOR)

IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR

Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

Datasheet Details

Part number	IRG4BC20F
Manufacturer	IRF
File Size	161.56 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC20F Datasheet
Additional preview pages of the IRG4BC20F datasheet.

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Full PDF Text Transcription

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PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.

Published: Aug 23, 2005 |