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IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • IGBT co-packaged with.

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Datasheet preview – IRG4BC20FD-S

Datasheet Details

Part number IRG4BC20FD-S
Manufacturer IRF
File Size 222.12 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC20FD-S Datasheet
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Full PDF Text Transcription

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PD -91783A IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs .
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