IRG7PH30K10DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF Features
* Low VCE (ON) Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode T
