Part number:
IRG7PH30K10PBF
Manufacturer:
International Rectifier
File Size:
350.46 KB
Description:
Insulated gate bipolar transistor.
IRG7PH30K10PBF Features
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tig
IRG7PH30K10PBF Datasheet (350.46 KB)
Datasheet Details
IRG7PH30K10PBF
International Rectifier
350.46 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH30K10PBF Distributor