Part number:
IRG7PH30K10PBF
Manufacturer:
International Rectifier
File Size:
350.46 KB
Description:
Insulated gate bipolar transistor.
IRG7PH30K10PBF Datasheet (350.46 KB)
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tig
IRG7PH30K10PBF Datasheet (350.46 KB)
IRG7PH30K10PBF
International Rectifier
350.46 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
