IRG7PH30K10PBF Datasheet - International Rectifier

IRG7PH30K10PBF, INSULATED GATE BIPOLAR TRANSISTOR

PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR .

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IRG7PH30K10PBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRG7PH30K10PBF

Manufacturer:

International Rectifier

File Size:

350.46 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tig

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation E C G TO-247AC G Gate C Collector E Emitter Absolute Maximum Ratin

IRG7PH30K10PBF Distributors

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IRG7PH30K10PBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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