* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* Ultra-low VF diode
* 1300Vpk repetitive transient capacity
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead
IRG7PH28UD1PBF Datasheet (409.01 KB)
IRG7PH28UD1PBF
International Rectifier
409.01 KB
Insulated gate bipolar transistor.
IRG7PH28UD1PbF IRG7PH28UD1MPbF
C VCES = 1200V IC = 15A, TC = 100°C
G E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION .
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