IRG7PH28UD1PBF Datasheet, Transistor, International Rectifier

IRG7PH28UD1PBF Features

• Transistor
•  Low VCE (ON) trench IGBT technology
•  Low switching losses
•  Square RBSOA
•  Ultra-low VF diode
•  1300Vpk repetitive transient capacity

PDF File Details

Part number:

IRG7PH28UD1PBF

Manufacturer:

International Rectifier

File Size:

409.01kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRG7PH28UD1PBF Application

• Applications Features
•  Low VCE (ON) trench IGBT technology
•  Low switching losses
•  Square RBSOA
•  Ultra-low V

TAGS

IRG7PH28UD1PBF

International Rectifier

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