IRG7PH28UD1PBF Datasheet - International Rectifier

IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH28UD1PBF Features

*  Low VCE (ON) trench IGBT technology

*  Low switching losses

*  Square RBSOA

*  Ultra-low VF diode

*  1300Vpk repetitive transient capacity

*  100% of the parts tested for ILM

*  Positive VCE (ON) temperature co-efficient

*  Tight parameter distribution

*  Lead

Datasheet Details

IRG7PH28UD1PBF

International Rectifier

409.01 KB

Insulated gate bipolar transistor.

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