IRG7PH28UD1PBF, IRG7PH28UD1MPBF Datasheet - International Rectifier

IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH28UD1PBF Features

*  Low VCE (ON) trench IGBT technology

*  Low switching losses

*  Square RBSOA

*  Ultra-low VF diode

*  1300Vpk repetitive transient capacity

*  100% of the parts tested for ILM

*  Positive VCE (ON) temperature co-efficient

*  Tight parameter distribution

*  Lead

IRG7PH28UD1MPBF-InternationalRectifier.pdf

IRG7PH28UD1PBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH28UD1PBF, IRG7PH28UD1MPBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRG7PH28UD1PBF, IRG7PH28UD1MPBF

Manufacturer:

International Rectifier

File Size:

409.01 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH28UD1PBF, IRG7PH28UD1MPBF.
Please refer to the document for exact specifications by model.

IRG7PH28UD1PBF Distributor

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IRG7PH28UD1PBF IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier