IRG7PG42UDPBF Datasheet - International Rectifier

IRG7PG42UDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PG42UDPBF Features

*  Low VCE (ON) trench IGBT technology

*  Low switching losses

*  Square RBSOA

*  100% of the parts tested for ILM

*  Positive VCE (ON) temperature co-efficient

*  Ultra fast soft recovery co-pak diode

*  Tight parameter distribution

*  Lead-free package Benefits

Datasheet Details

IRG7PG42UDPBF

International Rectifier

531.80 KB

Insulated gate bipolar transistor.

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