IRG7PG42UDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

*  Low VCE (ON) trench IGBT technology

*  Low switching losses

*  Square RBSOA

*  100% of the parts tested for ILM

*  Positive VCE (ON) temperature co-efficient

*  Ultra fast soft recovery co-pak diode

*  Tight parameter distribution

*  Lead-free package Benefits

IRG7PG42UDPBF

International Rectifier

531.80 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PG35UPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PH30K10PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

Image Gallery