IRG7PG35U-EPbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

*  Low VCE (ON) trench IGBT technology

*  Low switching losses

*  Square RBSOA

*  100% of the parts tested for ILM

*  Positive VCE (ON) temperature co-efficient

*  Tight parameter distribution

*  Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C

IRG7PG35U-EPbF

International Rectifier

411.36 KB

Insulated gate bipolar transistor.

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