IRG7PG35U-EPbF Datasheet, Transistor, International Rectifier

IRG7PG35U-EPbF Features

• Transistor
•  Low VCE (ON) trench IGBT technology
•  Low switching losses
•  Square RBSOA
•  100% of the parts tested for ILM
•  Positive VCE (ON) temperat

PDF File Details

Part number:

IRG7PG35U-EPbF

Manufacturer:

International Rectifier

File Size:

411.36kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRG7PG35U-EPbF Application

• Applications
•  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses
•  Rugged transient p

TAGS

IRG7PG35U-EPbF

International Rectifier

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