IRG7PG35U-EPbF Features
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C
IRG7PG35UPBF-InternationalRectifier.pdf
Datasheet Details
IRG7PG35U-EPbF, IRG7PG35UPBF
International Rectifier
411.36 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRG7PG35U-EPbF, IRG7PG35UPBF.
Please refer to the document for exact specifications by model.
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IRG7PG35U-EPbF Distributor
