FGD4536 Datasheet, igbt equivalent, Fairchild Semiconductor

FGD4536 Features

• Igbt
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant Applic

PDF File Details

Part number:

FGD4536

Manufacturer:

Fairchild Semiconductor

File Size:

1.07MB

Download:

📄 Datasheet

Description:

360v pdp igbt. Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and

FGD4536 Application

• Applications
• PDP TV, Consumer Appliances September 2013 General Description Using novel trench IGBT technology, Fairchild’s new series of

TAGS

FGD4536

Fairchild Semiconductor

📁 Related Datasheet

FGD4536 - IGBT (ON Semiconductor)
FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5.

FGD430C4009 - TFT-LCD module (FEIGEDA)
FE
I
G

E

D
A






ധᎪ൧٦۬ղ‫׈‬ሰႵཋ‫܄‬ඳ
SHENZHEN FEIGEDA ELECTRONIC CO.,LTD Specification 5'5-$%
NPEVMF
Module(྘‫)ݼ‬ğ
Customerčग़޼Ď: FGD430C4009 .

FGD2040G3-F085 - IGBT (ON Semiconductor)
EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy = 200 mJ at TJ = 25°C • Low Sat.

FGD2736G3-F085 - N-Channel IGBT (ON Semiconductor)
FGD2736G3-F085 EcoSPARKTM 270mJ, 360V, N-Channel Ignition IGBT FGD2736G3-F085 EcoSPARKTM 3 270mJ, 360V, N-Channel Ignition IGBT Features  SCIS Ener.

FGD2736G3-F085V - IGBT (ON Semiconductor)
FGD2736G3-F085V EcoSPARK) 3 Ignition IGBT 270 mJ, 360 V, N−Channel Ignition IGBT Features • SCIS Energy = 270 mJ at TJ = 25°C • Logic Level Gate Dri.

FGD2N40L - 400V N-Channel Logic Level IGBT (Fairchild Semiconductor)
.. FGD2N40L 400V N-Channel Logic Level IGBT March 2006 FGD2N40L 400V N-Channel Logic Level IGBT Features „ VCE(SAT) = 1.6V @ IC = .

FGD3040G2-F085 - N-Channel IGBT (ON Semiconductor)
ECOSPARK)2 300 mJ, 400 V, N-Channel Ignition IGBT FGB3040G2-F085, FGD3040G2-F085, FGP3040G2-F085, FGI3040G2-F085 Features • SCIS Energy = 300 mJ at TJ.

FGD3040G2-F085C - N-Channel IGBT (ON Semiconductor)
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logi.

FGD3040G2-F085V - N-Channel IGBT (ON Semiconductor)
FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Dri.

FGD3040G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
FGB3040G2_F085 / FGD3040G2_F085 / FGP3040G2_F085 / FGI3040G2_F085 May 2014 FGB3040G2_F085 / FGD3040G2_F085 FGP3040G2_F085 / FGI3040G2_F085 EcoSPARK.