FGD3N60LSD Datasheet, Igbt, Fairchild Semiconductor

FGD3N60LSD Features

• Igbt
• High Current Capability
• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
• High Input Impedance tm Description Fairchild's Insulated Gate Bipolar T

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Part number:

FGD3N60LSD

Manufacturer:

Fairchild Semiconductor

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761.90kb

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📄 Datasheet

Description:

Igbt. Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications wh

FGD3N60LSD Application

• Applications where very low On-Voltage Drop is a required feature. Applications
• HID Lamp Applications
• Piezo Fuel Injection Appl

TAGS

FGD3N60LSD

Fairchild Semiconductor

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