FGD3050G2V N-Channel IGBT

ON Semiconductor

Description

FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N *Channel Ignition IGBT .

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Datasheet Specifications

Part number: FGD3050G2V
Manufacturer: ON Semiconductor ↗
File Size: 593.41 KB
Datasheet: FGD3050G2V-ONSemiconductor.pdf
Description: N-Channel IGBT

Features

* SCIS Energy = 300 mJ at TJ = 25°C
* Logic Level Gate Drive
* AEC
* Q101 Qualified and PPAP Capable
* These Device is Pb

Applications

* Automotive Ignition Coil Driver Circuits
* High Current Ignition System
* Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collect

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FGD3050G2V N-Channel IGBT ON Semiconductor

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