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FGD3050G2V Datasheet - ON Semiconductor

FGD3050G2V, N-Channel IGBT

FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N *Channel Ignition IGBT .
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FGD3050G2V-ONSemiconductor.pdf

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Datasheet Details

Part number:

FGD3050G2V

Manufacturer:

ON Semiconductor ↗

File Size:

593.41 KB

Description:

N-Channel IGBT

Features

* SCIS Energy = 300 mJ at TJ = 25°C
* Logic Level Gate Drive
* AEC
* Q101 Qualified and PPAP Capable
* These Device is Pb

Applications

* Automotive Ignition Coil Driver Circuits
* High Current Ignition System
* Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collect

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