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IRGP4066D-EPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4066D-EPBF Features

* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight

IRGP4066D-EPBF Datasheet (332.31 KB)

Preview of IRGP4066D-EPBF PDF

Datasheet Details

Part number:

IRGP4066D-EPBF

Manufacturer:

International Rectifier

File Size:

332.31 KB

Description:

Insulated gate bipolar transistor.

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TAGS

IRGP4066D-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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