IRGP4066D-EPBF
International Rectifier
332.31kb
Insulated gate bipolar transistor.
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IRGP4066DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97576
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw.
IRGP4066-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97577
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Tem.
IRGP4066PBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97577
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Tem.
IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS s.
IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IG.
IRGP4063-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.
IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063DPbF IRGP4063D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • • Low VCE (ON) Trench IGBT.
IRGP4063D1-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.
IRGP4063D1PBF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.