IRGP4066DPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGP4066DPBF
Manufacturer	International Rectifier ↗
File Size	332.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4066DPBF_InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package C IRGP4066DPbF IRGP4066D-EPbF VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70V Benefits.
High Efficie.

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Published: Feb 5, 2014 |