IRGP4066DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4066DPBF Features
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight
