IRGP4066D, IRGP4066DPBF Datasheet - International Rectifier

IRGP4066D, IRGP4066DPBF, INSULATED GATE BIPOLAR TRANSISTOR

PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4066DPbF IRGP4066D-EPbF

Features

* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100

IRGP4066DPBF_InternationalRectifier.pdf