IRGP4066D, IRGP4066DPBF Datasheet - International Rectifier

IRGP4066D - INSULATED GATE BIPOLAR TRANSISTOR

IRGP4066D Features

* Low VCE (ON) Trench IGBT Technology

* Low Switching Losses

* Maximum Junction Temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA

* 100% of The Parts Tested for ILM

* Positive VCE (ON) Temperature Coefficient

* Tight Parameter

Datasheet Details

IRGP4066D, IRGP4066DPBF

International Rectifier

332.31 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGP4066D, IRGP4066DPBF.
Please refer to the document for exact specifications by model.

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