IRGP4066PBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4066PBF Features
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight
