IRGP4066-EPBF Features
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight
IRGP4066PBF_InternationalRectifier.pdf
Datasheet Details
IRGP4066-EPBF, IRGP4066PBF
International Rectifier
285.75 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4066-EPBF, IRGP4066PBF.
Please refer to the document for exact specifications by model.
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