IRG4PC40F Datasheet PDF - IRF INSULATED GATE BIPOLAR TRANSISTOR Specs

IRG4PC40F - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

Datasheet Details

Part number	IRG4PC40F
Manufacturer	IRF
File Size	145.35 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC40F Datasheet
Additional preview pages of the IRG4PC40F datasheet.

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Full PDF Text Transcription

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PD 91463B IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

Published: Jul 13, 2005 |