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IRG4PC30F - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PC30F

Datasheet Details

Part number	IRG4PC30F
Manufacturer	International Rectifier
File Size	149.82 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30F Datasheet
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Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: May 30, 2007 |