IRG4PC30FDPBF Datasheet | International Rectifier

- 95556 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free E n-channel Fast CoPack IGBT VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application...