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IRG4PC30K - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PC30K INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PC30K

Datasheet Details

Part number	IRG4PC30K
Manufacturer	International Rectifier
File Size	126.26 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30K Datasheet
Additional preview pages of the IRG4PC30K datasheet.

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Features

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits.
As a Freewheeling Diode we recommend our.

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Published: May 30, 2007 |