IRG4PC30KDPBF Datasheet | International Rectifier

PD -95557 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (start), T J = 125°C, .. VGE = 15V • bines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free Short Circuit Rated UltraFast IGBT • High short circuit rating optimized for motor control, Features VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for...