IRG4PC30KPBF Datasheet | International Rectifier

.. - 94921 INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • bines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Lead-Free Short Circuit Rated UltraFast IGBT VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits • As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer...