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IRG4PC30KPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PC30KPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PC30KPBF

Datasheet Details

Part number	IRG4PC30KPBF
Manufacturer	International Rectifier
File Size	287.70 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30KPBF Datasheet
Additional preview pages of the IRG4PC30KPBF datasheet.

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Features

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits As a Freewheeling Diode we recommend our.

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Published: Aug 17, 2007 |