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IRG4PC30FD - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PC30FD INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PC30FD

Datasheet Details

Part number	IRG4PC30FD
Manufacturer	International Rectifier
File Size	215.18 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30FD Datasheet
Additional preview pages of the IRG4PC30FD datasheet.

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Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
IGBT co-packaged with.

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Published: May 30, 2007 |