IRG4PC40W Datasheet | IRF

Features - Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications - Industry-benchmark switching losses improve efficiency of all power supply topologies - 50% reduction of Eoff parameter - Low IGBT conduction losses - Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel Benefits - Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 k Hz ("hard switched" mode) - Of particular benefit to single-ended converters and boost PFC topologies 150W and higher - Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >>300 k Hz) TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 40 20 160 160 ± 20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf- in (1.1N- m) Units V m J W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. - - - 0.24 - - - 6 (0.21) Max. - - - 40 - - - Units °C/W g...