Datasheet4U Logo Datasheet4U.com

IRG4PC40KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4PC40KPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40SPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -94912 IRG4PC40KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits • Generation 4 IGBTs offer highest efficiencies available • HEXFRED diodes optimized for performance with IGBTs.