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IRG4PC40K Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR.

IRG4PC40K datasheet preview

Datasheet Details

Part number	IRG4PC40K
Manufacturer	IRF
File Size	119.38 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC40K_IRF.pdf

Key Features

Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides higher efficiency than Generation 3.
Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

IRG4PC40KDPBF from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	IRG4PC40KDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC40KPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC40FDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC40FPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC40SPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier

More Datasheets from IRF

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