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IRG4PC40KPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified.

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Part Number Description
IRG4PC40KDPBF INSULATED GATE BIPOLAR TRANSISTOR
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IRG4PC40FPBF INSULATED GATE BIPOLAR TRANSISTOR
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PD - 95646 IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.