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IRG4PC20UPBF - UltraFast Speed IGBT

Key Features

  • • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel C E C G TO-247AC Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified.

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PD - 97289 IRG4PC20UPbF PROVISIONAL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.