Datasheet4U Logo Datasheet4U.com

IRG4PC20UPBF - UltraFast Speed IGBT

Features

  • • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel C E C G TO-247AC Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified.

📥 Download Datasheet

Datasheet preview – IRG4PC20UPBF

📁 Similar Datasheet

  • IRG4PC40F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40U - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40UD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40W - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC50F - Fast Speed IGBT (IRF)
  • IRG4PC50FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 97289 IRG4PC20UPbF PROVISIONAL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.
Published: |