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PD - 95398
IRG4PC50FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V VCE(on) typ. = 1.
IRG4PC50F Datasheet
