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IRG4PC50F-EPBF - Fast Speed IGBT

Key Features

  • • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.