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IRG4PC50S Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD - 91581A IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR.

IRG4PC50S datasheet preview

Datasheet Details

Part number	IRG4PC50S
Manufacturer	IRF
File Size	164.63 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC50S_IRF.pdf

Key Features

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

IRG4PC50SDPBF from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	IRG4PC50SDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC50SPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC50F-EPBF	Fast Speed IGBT	International Rectifier
	IRG4PC50FDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRG4PC50FPBF	Fast Speed IGBT	International Rectifier

More Datasheets from IRF

Part Number	Description
IRG4PC50F	Fast Speed IGBT
IRG4PC50FD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50KD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50U	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50W	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40F	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40FD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40KD	INSULATED GATE BIPOLAR TRANSISTOR

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