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IRG4PC50UD - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • IGBT co-packaged with.

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Datasheet preview – IRG4PC50UD

Datasheet Details

Part number IRG4PC50UD
Manufacturer IRF
File Size 213.93 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PC50UD Datasheet
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Full PDF Text Transcription

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PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
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