IRG4PC50U Datasheet PDF - IRF INSULATED GATE BIPOLAR TRANSISTOR Specs

IRG4PC50U - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

Datasheet Details

Part number	IRG4PC50U
Manufacturer	IRF
File Size	147.45 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC50U Datasheet
Additional preview pages of the IRG4PC50U datasheet.

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Full PDF Text Transcription

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PD 91470F IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

Published: Aug 2, 2005 |