Part IRG4PC50U
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer IRF
Size 147.45 KB
IRF
IRG4PC50U

Overview

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-channel Benefits
  • Generation 4 IGBT's offer highest efficiency available
  • IGBT's optimized for specified application conditions
  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC