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IRG4PC50U - INSULATED GATE BIPOLAR TRANSISTOR

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IRF

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IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRG4PC50U

Datasheet Details

Part number	IRG4PC50U
Manufacturer	IRF
File Size	147.45 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC50U Datasheet
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Features

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Aug 2, 2005 |