G4PC50UD Overview
.. PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-ch an nel Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC
G4PC50UD Key Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode - Generation 4
- Generation 4 IGBT's offer highest efficiencies available - IGBT's optimized for specific application conditions - HEXFRE