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G4PC50K - IRG4PC50K

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations IRG4PC50K Short Circuit Rated UltraFast IGBT C VCES = 600V G E n-channel VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A Benefits.
  • As a Freewheeling Diode we recommend our.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PC50F IRG4PC50F
G4PC50U IRG4PC50U
G4PC50UD IRG4PC50UD
G4PC50W IRG4PC50W
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91583B INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations IRG4PC50K Short Circuit Rated UltraFast IGBT C VCES = 600V G E n-channel VCE(on) typ. = 1.