G4PC50W Datasheet | International Rectifier

.. - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR Features - Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications - Industry-benchmark switching losses improve efficiency of all power supply topologies - 50% reduction of Eoff parameter - Low IGBT conduction losses - Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits - Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 k Hz ("hard switched" mode) - Of particular benefit to single-ended converters and boost PFC topologies 150W and higher - Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >300 k...