G4PC50W Overview
.. PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >300 kHz)
G4PC50W Key Features
- Designed expressly for Switch-Mode Power Supply and PFC (power factor correction)