G4PC50U Overview
PD 91470F INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50U n-channel VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
G4PC50U Key Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-247AC package
- Generation 4 IGBT's offer highest efficiency available - IGBT's optimized for specified application conditions - Designe