Part IRG4PC50FDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 785.86 KB
International Rectifier
IRG4PC50FDPBF

Overview

  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-247AC package
  • Lead-Free C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-cha n ne l Benefits
  • Generation -4 IGBT's offer highest efficiencies available
  • IGBT's optimized for specific application conditions
  • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC