IRG4PC50FDPBF Datasheet | International Rectifier

.. PD -95225 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-247AC package - Lead-Free Fast CoPack IGBT VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-cha n ne l Benefits - Generation -4 IGBT's offer highest efficiencies available - IGBT's optimized for...