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PD - 94858
IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free
C
VCES = 600V
G E
VCE(on) max. = 2.
IRG4PC50WPBF Datasheet
