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IRG4PC50SDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • C VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Benefits n-channel • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97316 IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Standard Speed CoPack IGBT Features C VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Benefits n-channel • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .