Datasheet4U Logo Datasheet4U.com

IRG4PC50SDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • C VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Benefits n-channel • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific.

📥 Download Datasheet

Datasheet preview – IRG4PC50SDPBF
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 97316 IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Standard Speed CoPack IGBT Features C VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Benefits n-channel • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
Published: |