Datasheet4U Logo Datasheet4U.com

IRG4PC50K - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V G E VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A n-channel Benefits.
  • As a Freewheeling Diode we recommend our.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC50F Fast Speed IGBT IRF
IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4PC50KDPBF UltraFast IGBT
IRG4PC50KPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50F-EPBF Fast Speed IGBT
IRG4PC50FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50FPBF Fast Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V G E VCE(on) typ. = 1.