IRG4PC40U Datasheet | IRF

Features - Ultra Fast: Optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - Industry standard TO-247AC package Ultra Fast Speed IGBT VCES = 600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits - Generation 4 IGBT's offer highest efficiency available - IGBT's optimized for specified application conditions - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 40 20 160 160 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m) Units V m J W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 0.77 -----40 ------ Units °C/W g (oz) .irf. 12/30/00 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. 600 18 ------------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance U 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage T ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter...