Infineon Datasheet | Specifications & PDF Download

IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according t

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

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IDP2308 Digital Multi-Mode PFC + LLC Combo Controller Product Highlights  Integrated 600V startup cell  Integrated floating driver based on corele

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IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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Version 2.1, 30 Aug 2011 ® Never stop thinking. ICE3BR4765JZ Revision History: 2011-8-30 Previous Version: V2.0 Page 27 Subjects (major changes

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Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching se

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CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qua

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IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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PROFET™+ 24V BTF6070-2ERV Smart High-Side Power Switch Dual Channel, 60 mΩ Package PG-TDSO-14 Marking 6070-2ERV 1 Overview Application • Suitable

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Da ta s h e e t, Ve rs i o n 2 . 2, Ju l y 4 , 2 0 1 1 Q u a s i- R e s o na n t C on t r o ll er PWM Po we r M an a ge me nt & Su pp l y N e v e

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IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode Hig

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