Infineon Datasheet | Pinout, Features, Price Comparison & PDF

IDP2308 Digital Multi-Mode PFC + LLC Combo Controller Product Highlights  Integrated 600V startup cell  Integrated floating driver based on corele

IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

IPB017N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

IQE013N04LM6CG MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% a

BSC014N04LS MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% aval

IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according t

BSC010NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V

IPT012N08N5 MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating

IPT008N06NM5LF MOSFET OptiMOSTM 5 Linear FET, 60 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

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BSC014N06NSSC MOSFET OptiMOSTM Power-Transistor, 60 V Features • Double side cooled package-with lowest Junction-top thermal resistance • 175°C rated

Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page

IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qua

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

IPD70R900P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th