IRGB4630DPbF Datasheet - Infineon

IRGB4630DPbF IGBT

VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications Industrial Motor Drive Inverters UPS Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4630DPbF TO-220AB C GC E IRGP4630DPbF TO-247AC GCE IRGP4630D-EPbF TO-247AD C G E n-channel G Gate E GC IRGIB4630DPbF TO-220AB Full-Pak C Collector GC E.

IRGB4630DPbF Features

* Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coeffici

IRGB4630DPbF-Infineon.pdf