IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB4056DPBF
Manufacturer	International Rectifier
File Size	353.41 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4056DPBF_InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 µS short circuit SOA.
Square RBSOA.
100% of the parts tested for 4X rated current (ILM).
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode.
Tight parameter distribution.
Lead Free Package C G E n-channel IRGB4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C.

📁 IRGB4056DPBF Similar Datasheet

Other Datasheets by International Rectifier

Published: Nov 22, 2006 |