Datasheet4U Logo Datasheet4U.com

IRGB4056DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGB4056DPBF Description

PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGB4056DPBF Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 µS short circuit SOA
* Square RBSOA
* 100% of the parts tested for 4X rated current (ILM)
* Positive VCE (ON) Temperature co-efficient

IRGB4056DPBF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI C E C G TO-220AB G Gate C Collector E Emitter Ab

📥 Download Datasheet

Preview of IRGB4056DPBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGB4056DPBF-like datasheet