IRGB4060DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4060DPBF Features
* Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of The Parts Tested for 4X Rated Current (ILM) Positive VCE (on) Temperature Co
