IRGB4060DPBF Datasheet - International Rectifier

IRGB4060DPBF, INSULATED GATE BIPOLAR TRANSISTOR

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IRGB4060DPBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGB4060DPBF

Manufacturer:

International Rectifier

File Size:

322.59 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of The Parts Tested for 4X Rated Current (ILM) Positive VCE (on) Temperature Co

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI E G C TO-220AB G C E Gate Collector Emitter

IRGB4060DPBF Distributors

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IRGB4060DPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB4060DPBF-like datasheet